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| STGP10NC60H N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESHTM IGBT TARGET SPECIFICATION General features Type STGP10NC60H VCES 600V VCE(sat) (Max)@ 25C < 2.5V IC @100C 10A LOWER ON-VOLTAGE DROP (Vcesat) LOWER CRES / CIES RATIO (NO CROSS-CONDUCTION SUSCEPTIBILITY) VERY SOFT ULTRA FAST RECOVERY ANTIPARALLEL DIODE 3 1 2 TO-220 Description Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. Internal schematic diagram Applications HIGH FREQUENCY MOTOR CONTROLS SMPS and PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES MOTOR DRIVERS Order codes Sales Type STGP10NC60H Marking P10NC60H Package TO-220 Packaging TUBE November 2005 This is a preliminary information on a new product now in development. Details are subject to change without notice Rev 1 1/9 www.st.com 9 1 Electrical ratings STP10NC60H 1 Table 1. Electrical ratings Absolute maximum ratings Parameter Collector-Emitter Voltage (VGS = 0) Collector Current (continuous) at TC = 25C Collector Current (continuous) at TC = 100C Collector Current (pulsed) Gate-Emitter Voltage Total Dissipation at TC = 25C Storage Temperature - 55 to 150 Operating Junction Temperature Maximum Lead Temperature For Soldering Purpose (for 10sec. 1.6 mm from case) 300 C C Value 600 20 10 40 20 60 Unit V A A W A W Symbol VCES IC Note 5 IC Note 5 ICM Note 1 VGE PTOT Tstg Tj Tl Table 2. Rthj-case Rthj-amb Thermal resistance Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 2.08 62.5 C/W C/W 2/9 STP10NC60H 2 Electrical characteristics 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 3. Symbol VBR(CES) On/Off Parameter Collector-Emitter Breakdown Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Threshold Voltage Collector-Emitter Saturation Voltage Forward Transconductance Test Conditions IC= 1mA, VGE= 0 VCE= Max Rating,TC= 25C VCE=Max Rating,TC= 125C VGE= 20V , VCE= 0 VCE= VGE, IC= 250A VGE= 15V, IC= 5A VGE= 15V, IC= 5A, Tc= 125C VCE = 15V, IC= 5A 5 1.9 1.7 TBD Min. 600 10 1 100 7 2.5 Typ. Max. Unit V A mA ICES IGES VGE(th) VCE(sat) gfs nA V V V S Table 4. Symbol C ies C oes Cres Qg Qge Qgc Dynamic Parameter Test Conditions Min. Typ. TBD TBD TBD TBD TBD TBD Max. Unit pF pF pF nC nC nC Input Capacitance VCE = 25V, f = 1MHz,VGE = 0 Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCE = 390V, IC = 5A, VGE = 15V, (see Figure 2) 3/9 2 Electrical characteristics STP10NC60H Table 5. Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on tr(Voff) td(off) tf tr(Voff) td(off) tf Switching On/Off (inductive load) Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Delay Time Current Rise Time Turn-on Current Slope Off Voltage Rise Time Turn-off Delay Time Current Fall Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Test Conditions VCC = 390V, IC = 5A RG= 10, VGE= 15V, Tj= 25C (see Figure 3) VCC = 390V, IC = 5A RG= 10, VGE= 15V, Tj=125C (see Figure 3) Vcc = 390V, IC = 5A, RGE = 10 , VGE = 15V,TJ=25C (see Figure 3) Vcc = 390V, IC = 5A, RGE=10 , VGE =15V, Tj=125C (see Figure 3) Min. Typ. TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD Max. Unit ns ns A/s ns ns A/s ns ns ns ns ns ns Table 6. Symbol Eon Note 3 Eoff Note 4 Ets Eon Note 3 Eoff Note 4 Ets Switching energy (inductive load) Parameter Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Turn-on Switching Losses Turn-off Switching Losses Total Switching Losses Test Conditions VCC = 390V, IC = 75A RG= 10, V GE= 15V, Tj= 25C (see Figure 3) VCC = 390V, IC = 5A RG= 10, V GE= 15V, Tj= 125C (see Figure 3) Min. Typ. TBD TBD TBD TBD TBD TBD Max. Unit J J J J J J (1)Pulse width limited by max. junction temperature (2) Pulsed: Pulse duration = 300 s, duty cycle 1.5% (3) Eon is the tun-on losses when a typical diode is used in the test circuit in figure 2 Eon include diode recovery energy. If the IGBT is offered in a package with a co-pak diode, the co-pack diode is used as external diode. IGBTs & Diode are at the same temperature (25C and 125C) (4) Turn-off losses include also the tail of the collector current (5) Calculated according to the iterative formula: T -T JMAX C I ( T ) = ------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( MAX ) C C 4/9 STP10NC60H 3 Test Circuits 3 Test Circuits Test Circuit for Inductive Load Switching Figure 2. Gate Charge Test Circuit Figure 1. Figure 3. Switching Waveform 5/9 4 Package mechanical data STP10NC60H 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 6/9 STP10NC60H 4 Package mechanical data TO-220 MECHANICAL DATA DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154 oP Q 7/9 5 Revision History STP10NC60H 5 Revision History Date 18-Nov-2005 Revision 1 Initial release. Changes 8/9 STP10NC60H 5 Revision History Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners (c) 2005 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 9/9 |
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